English
简体中文
MEMS OSC XO 48.0000MHZ LVCMOS LV
MOSFET N-CH 55V 110A TO262
IGBT W/ULTRAFAST SOFT RECOVERY D
RB531SM-40FH IS THE HIGH RELIABI
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | 650 V |
| 电流 - 集电极 (ic) (max): | 70 A |
| 电流 - 集电极脉冲 (icm): | 105 A |
| vce(on) (max) @ vge, ic: | 2V @ 15V, 35A |
| 功率 - 最大值: | 273 W |
| 开关能量: | 1.3mJ (on), 500µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 105 nC |
| td（开/关）@ 25°c: | 50ns/105ns |
| 测试条件: | 400V, 35A, 10Ohm, 15V |
| 反向恢复时间 (trr): | 150 ns |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IGW60T120Rochester Electronics |
IGW60T120 - DISCRETE IGBT WITHOU |
|
STGWA40H65DFB2STMicroelectronics |
TRENCH GATE FIELD-STOP 650 V 40 |
|
STGW8M120DF3STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
IRGP50B60PD1PBF-INFRochester Electronics |
AUTOMOTIVE WARP2 IGBT ULTRAFAST |
|
STGD10NC60HDT4STMicroelectronics |
IGBT 600V 20A 62W D2PAK |
|
IKW20N60H3Rochester Electronics |
IKW20N60 - DISCRETE IGBT WITH AN |
|
IXGH25N250Wickmann / Littelfuse |
IGBT 2500V 60A 250W TO247 |
|
HGT1S20N36G3VLRochester Electronics |
N-CHANNEL IGBT |
|
APT13GP120BDQ1GRoving Networks / Microchip Technology |
IGBT 1200V 41A 250W TO247 |
|
IRG4BC30FD1PBFRochester Electronics |
IGBT, 31A I(C), 600V V(BR)CES, N |
|
IGTM10N40ARochester Electronics |
N CHANNEL IGBT FOR SWITCHING APP |
|
IXGP30N120B3Wickmann / Littelfuse |
IGBT 1200V 60A 300W TO220 |
|
IXXQ30N60B3MWickmann / Littelfuse |
IGBT |