







IC REG LINEAR 3.2V 200MA HSNT6-B
MOSFET N-CH 60V 14.9A/82A DPAK
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14.9A (Ta), 82A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.1mOhm @ 41A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 70 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3850 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta), 96W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK (SINGLE GAUGE) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
JAN2N6790Microsemi |
MOSFET N-CH 200V 3.5A TO39 |
|
|
IIPC10S2N08LCHIPX6SA1IR (Infineon Technologies) |
MOSFET N-CHANNEL CHIP |
|
|
IRLC014NBIR (Infineon Technologies) |
MOSFET 55V 2.8A DIE |
|
|
UPD78F0847GKA-C01-GAK-GRenesas Electronics America |
MOSFET N-CH |
|
|
APTC90SKM60CT1GRoving Networks / Microchip Technology |
MOSFET N-CH 900V 59A SP1 |
|
|
IPC65SR048CFDAE8206X2SA2IR (Infineon Technologies) |
MOSFET N-CH |
|
|
IRFC048NIR (Infineon Technologies) |
MOSFET N-CH |
|
|
MIC94031CYWRoving Networks / Microchip Technology |
MOSFET P-CH 16V 1A |
|
|
64-2137PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 106A D2PAK |
|
|
LSS050P03FP8TB1ROHM Semiconductor |
MOSFET P-CH 30V 5A SOP8 |
|
|
RJK6024DPH-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 0.4A LDPAK |
|
|
FDD86561-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 45A DPAK |
|
|
98-0193IR (Infineon Technologies) |
IC MOSFET HS PWR SW 35A D2PAK |