







MEMS OSC XO 133.0000MHZ LVDS SMD
IC DRAM 1GBIT PARALLEL 60FBGA
DIODE GEN PURP 100V 1A TS-1
MOSFET N-CH 500V 28A TO247AD
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS IV® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 210 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 360W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AD |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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