English
简体中文
XTAL OSC VCXO 148.3500MHZ HCSL
CONN EDGE DUAL FMALE 90POS 0.039
CONN HEADER SMD 66POS 2.54MM
MOSFET P-CH 20V 950MA TLM621H
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 950mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 150mOhm @ 950mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.56 nC @ 4.5 V |
| vgs (最大值): | 8V |
| 输入电容 (ciss) (max) @ vds: | 200 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TLM621H |
| 包/箱: | 6-XFDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
APT6040BNMicrosemi |
MOSFET N-CH 600V 18A TO247AD |
|
|
JANTX2N7225Microsemi |
MOSFET N-CH 200V 27.4A TO254AA |
|
|
IPC60R125C6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
IRLML0100TRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.6A SOT23 |
|
|
SI5446DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25A PPAK |
|
|
AON6718L_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/80A 8DFN |
|
|
2N7225Microsemi |
MOSFET N-CH 200V 27.4A TO254AA |
|
|
FQD5N50CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 500V 4A TO252 |
|
|
UPD703069YGJ-169-UEN-ARenesas Electronics America |
MOSFET N-CH |
|
|
IPC60R950C6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
RQA0011DNS#G0Renesas Electronics America |
MOSFET N-CH 16V 3.8A 2HWSON |
|
|
JAN2N6788UMicrosemi |
MOSFET N-CH 100V 4.5A 18ULCC |
|
|
SIR774DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V |