







MEMS OSC XO 166.6660MHZ LVDS SMD
MOSFET N-CH 30V 43A DPAK
MOSFET N-CH 60V 23A PWRDI5060-8
CONN RCPT FMALE 4P GOLD SLDR CUP
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 95.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4556 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NVTFS020N06CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7A/27A 8WDFN |
|
|
NVH4L040N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247-4 |
|
|
SI3415B-TPMicro Commercial Components (MCC) |
P-CHANNEL MOSFET, SOT-23 |
|
|
2SK1093-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RF1S4N100SM9ARochester Electronics |
MOSFET N-CH 1000V 4.3A TO263AB |
|
|
H5N3301LSTL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK4212A-ZK-E1-AYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
HTNFET-TCHoneywell Aerospace |
MOSFET N-CH 55V 4-PIN |
|
|
UPA1716G-E1-ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NVMFS6H864NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/22A 5DFN |
|
|
TK33S10N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 33A DPAK |
|
|
2SJ325-Z-AZRochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
RFW2N06RLERochester Electronics |
N-CHANNEL POWER MOSFET |