







MEMS OSC XO 19.2000MHZ H/LV-CMOS
PREBIAS TRANSISTOR SOT363 T&R 3K
MOSFET P-CH 60V 75A TO220AB
BOX ALUM UNPAINTED 7.87"LX6.3"W
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 9.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 141 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8620 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2W (Ta), 183W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI4963DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
NP45N06VDK-E1-AYRenesas Electronics America |
MOSFET N-CH 60V 45A TO252 |
|
|
TPN2R903PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 70A 8TSON |
|
|
SIHG11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO247AC |
|
|
2SJ317NYTL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
NTMFS5C645NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A 5DFN |
|
|
2SK3288ENTL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
2SJ210-T2B-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
|
2SK3116B(1)-ZK-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PMZB370UNE,315-NEXRochester Electronics |
EFFECT TRANSISTOR, 0.9A I(D), 30 |
|
|
IPL60R115CFD7AUMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
2SK1567-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTMFS5C442NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |