English
简体中文
MEMS OSC XO 26.0000MHZ H/LV-CMOS
IC PWR SUPPLY SEQUENCER SOT23-6
DGTL ISO 2500VRMS 4CH GP 16SOIC
MOSFET N-CH 40V 75A PPAK SO-8
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMJ65H650SCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 10A ITO220AB |
|
|
RSQ030N08HZGTRROHM Semiconductor |
MOSFET N-CH 80V 3A TSMT6 |
|
|
RJJ0621DPP-00#T2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
SIDR220DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 87.7A/100A PPAK |
|
|
SQJ431EP-T2_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
|
SQ3495EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
|
SQ3418AEEV-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 30V 7.8A 6TSOP |
|
|
STB75N06HDT4Rochester Electronics |
NFET D2PAK SPCL 60V TR |
|
|
ZVN4424GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V SOT223 T&R |
|
|
2SK2617ALSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
STD5NM50AGSTMicroelectronics |
MOSFET N-CH 500V 7.5A DPAK |
|
|
DMN90H8D5HCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 900V 2.5A ITO220AB |
|
|
TSM70N600ACL X0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 8A TO262S |