







CRYSTAL 40.0000MHZ 18PF SMD
MOSFET N-CH 100V 13A/90A TO263
SFERNICE POTENTIOMETERS & TRIMME
HD INDL NON-AMP APPLI
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 90A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3430 pF @ 50 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2.1W (Ta), 267W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D²Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRF8113GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 17.2A 8SO |
|
|
NTD65N03R-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 9.5A/32A IPAK |
|
|
RJK6012DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 10A TO220FP |
|
|
APT30N60SC6Microsemi |
MOSFET N-CH 600V 30A D3PAK |
|
|
BUZ30A E3045AIR (Infineon Technologies) |
MOSFET N-CH 200V 21A D2PAK |
|
|
IRFR120ZTRLIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
|
SI4778DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 8A 8SO |
|
|
STP5NB60STMicroelectronics |
MOSFET N-CH 600V 5A TO220AB |
|
|
FQD7P06TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 5.4A DPAK |
|
|
FDN5618P_GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.25A SUPERSOT3 |
|
|
AON6442Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 22A/32A 8DFN |
|
|
IRLZ34NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO262 |
|
|
SUD50P04-23-GE3Vishay / Siliconix |
MOSFET P-CH 40V 8.2A/20A TO252 |