







MEMS OSC XO 27.5400MHZ H/LV-CMOS
MOSFET P-CH 8V 4.4A 6TSOP
TERM BLK 12P SIDE ENTRY 5MM PCB
INSULATION DISPLACEMENT TERMINAL
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 8 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.4A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 42mOhm @ 5.8A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | 1.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BS170ZL1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
|
IRFU020PBFVishay / Siliconix |
MOSFET N-CH 60V 14A TO251AA |
|
|
NTB75N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
|
AOT12N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO220 |
|
|
IXTH60N15Wickmann / Littelfuse |
MOSFET N-CH 150V 60A TO247 |
|
|
IRL3303PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 38A TO220AB |
|
|
IRF6215LPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A TO262 |
|
|
IRF530N,127NXP Semiconductors |
MOSFET N-CH 100V 17A TO220AB |
|
|
HUFA76413D3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A IPAK |
|
|
AOB2918LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13A/90A TO263 |
|
|
IRF8113GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 17.2A 8SO |
|
|
NTD65N03R-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 9.5A/32A IPAK |
|
|
RJK6012DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 10A TO220FP |