English
简体中文
NMP CONFIGURABLE POWER SUPPLY 12
MEMS OSC XO 60.0000MHZ LVCMOS LV
MOSFET N-CH 60V 35A D2PAK
MODULAR JACK RJMG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1060 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 85W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFSL4610PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 73A TO262 |
|
STW55NM50NSTMicroelectronics |
MOSFET N-CH 500V 54A TO247-3 |
|
FQD2N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 1.7A DPAK |
|
IRF9Z24NLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 12A TO262 |
|
IXTU06N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 600MA TO251 |
|
MTB23P06VT4Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 23A D2PAK |
|
ZVN0124ZSTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 160MA E-LINE |
|
IRLR110ATMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.7A DPAK |
|
IRF7807APBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
2SK3430-AZRenesas Electronics America |
MOSFET N-CH 40V 80A TO220AB |
|
TSM13N50ACI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 500V 13A ITO220AB |
|
IRF9Z34STRLVishay / Siliconix |
MOSFET P-CH 60V 18A D2PAK |
|
IRFB3307IR (Infineon Technologies) |
MOSFET N-CH 75V 130A TO220AB |