







 
                            MOSFET N-CH 500V 18A D2PAK
 
                            IC DRAM 1GBIT PARALLEL 78WBGA
 
                            CONN RCPT 32POS 0.079 GOLD SMD
 
                            THRD INSERT SPK PLG 3/8
| 类型 | 描述 | 
|---|---|
| 系列: | MDmesh™ II | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Obsolete | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 500 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 190mOhm @ 9A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V | 
| vgs (最大值): | ±25V | 
| 输入电容 (ciss) (max) @ vds: | 1950 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 140W (Tc) | 
| 工作温度: | 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | D2PAK | 
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SFH9240Sanyo Semiconductor/ON Semiconductor | MOSFET P-CH 200V 11A TO3P | 
|   | NVMFS5C426NWFT3GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 40V 5DFN | 
|   | SUP40N10-30-GE3Vishay / Siliconix | MOSFET N-CH 100V 38.5A TO220AB | 
|   | NTHS2101PT1GSanyo Semiconductor/ON Semiconductor | MOSFET P-CH 8V 5.4A CHIPFET | 
|   | IRFS11N50ATRRVishay / Siliconix | MOSFET N-CH 500V 11A D2PAK | 
|   | IRFS17N20DPBFIR (Infineon Technologies) | MOSFET N-CH 200V 16A D2PAK | 
|   | AUIRFL024NIR (Infineon Technologies) | MOSFET N-CH 55V 2.8A SOT-223 | 
|   | IRF740STRRVishay / Siliconix | MOSFET N-CH 400V 10A D2PAK | 
|   | IPU04N03LA GIR (Infineon Technologies) | MOSFET N-CH 25V 50A TO251-3 | 
|   | AO4771Alpha and Omega Semiconductor, Inc. | MOSFET P-CH 30V 4A 8SOIC | 
|   | IPP13N03LB GIR (Infineon Technologies) | MOSFET N-CH 30V 30A TO220-3 | 
|   | FDC3612_F095Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 2.6A SUPERSOT6 | 
|   | TPCP8103-H(TE85LFMToshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 4.8A PS-8 |