







 
                            XTAL OSC VCXO 540.0000MHZ LVDS
 
                            MEMS OSC XO 125.0000MHZ LVCMOS
 
                            MEMS OSC XO 133.3333MHZ LVPECL
 
                            MOSFET N-CH 100V 9.7A TO262
| 类型 | 描述 | 
|---|---|
| 系列: | HEXFET® | 
| 包裹: | Tube | 
| 零件状态: | Obsolete | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 100 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 9.7A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 200mOhm @ 5.7A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 330 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 3.8W (Ta), 48W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-262 | 
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | FQB46N15TM_AM002Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 150V 45.6A D2PAK | 
|   | ZVN4306AVSTOAZetex Semiconductors (Diodes Inc.) | MOSFET N-CH 60V 1.1A E-LINE | 
|   | IRF6608TR1IR (Infineon Technologies) | MOSFET N-CH 30V 13A DIRECTFET | 
|   | STP3NK100ZSTMicroelectronics | MOSFET N-CH 1000V 2.5A TO220AB | 
|   | TK4P60DB(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 3.7A DPAK | 
|   | IPS03N03LA GIR (Infineon Technologies) | MOSFET N-CH 25V 90A TO251-3 | 
|   | NTD24N06LSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 24A DPAK | 
|   | IRFR130ATMSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 13A DPAK | 
|   | IRL5602SIR (Infineon Technologies) | MOSFET P-CH 20V 24A D2PAK | 
|   | SI7856ADP-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | 
|   | IRLR014TRRVishay / Siliconix | MOSFET N-CH 60V 7.7A DPAK | 
|   | IRF3709ZCSIR (Infineon Technologies) | MOSFET N-CH 30V 87A D2PAK | 
|   | STFILED627STMicroelectronics | MOSFET N-CH 620V 7A I2PAKFP |