English
简体中文
0.75X4.0FLT6061T6511-6 3/4" X 4"
MOSFET N-CH 55V 18A TO262
IC INTERFACE SPECIALIZED 42TQFN
IC DRVR SYNC RECT 28-TSSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 60mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 480 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2035(T5L,F,T)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA SSM |
|
IRFZ24NLIR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO262 |
|
SI4435DYTRIR (Infineon Technologies) |
MOSFET P-CH 30V 8A 8SO |
|
HUF75637S3_NR4895Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A D2PAK |
|
DMG7401SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 9.8A PWRDI3333-8 |
|
IPI80N06S2L05AKSA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO262-3 |
|
SPP24N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24.3A TO220-3 |
|
IRFZ24NSTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 17A D2PAK |
|
FQD12N20LTM_SN00173Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
|
IRFP17N50LVishay / Siliconix |
MOSFET N-CH 500V 16A TO247-3 |
|
IPP054NE8NGHKSA2IR (Infineon Technologies) |
MOSFET N-CH 85V 100A TO220-3 |
|
STP80NE06-10STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
FQB4N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.8A D2PAK |