English
简体中文
HIGH PERF DUAL STAGE PWR LINE FI
MOSFET N-CH 30V 14A DIRECTFET
ACT90MH53SD-6149
IC ADC 16BIT 4CH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 59A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.7mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1330 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.3W (Ta), 42W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ MP |
| 包/箱: | DirectFET™ Isometric MP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK4006DPP-M0#T2Renesas Electronics America |
MOSFET N-CH 400V 8A TO220FL |
|
SIE876DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A 10POLARPAK |
|
STB21NM60N-1STMicroelectronics |
MOSFET N-CH 600V 17A I2PAK |
|
STP30NM60NDSTMicroelectronics |
MOSFET N-CH 600V 25A TO220AB |
|
FQPF17N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 9.5A TO220F |
|
IXFH14N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 14A TO247AD |
|
IRF7468IR (Infineon Technologies) |
MOSFET N-CH 40V 9.4A 8SO |
|
TK20A25D,S5Q(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 20A TO220SIS |
|
FQD7P20TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
|
SIA425EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
IRF820ASTRLVishay / Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
|
HAT2192WP-EL-ERenesas Electronics America |
MOSFET N-CH 250V 10A 8WPAK |
|
STF25N10F7STMicroelectronics |
MOSFET N-CH 100V 19A TO220FP |