







 
                            MEMS OSC XO 60.0000MHZ LVCMOS
 
                            IC SRAM 18MBIT PARALLEL 165TFBGA
 
                            COMP O= .975,L= 3.50,W= .085
 
                            MOSFET P-CH 30V 11A 8SOP
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Obsolete | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 4V, 10V | 
| rds on (max) @ id, vgs: | 12mOhm @ 5.5A, 10V | 
| vgs(th) (最大值) @ id: | 2V @ 1mA | 
| 栅极电荷 (qg) (max) @ vgs: | 107 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 5710 pF @ 10 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 1W (Ta) | 
| 工作温度: | 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-SOP (5.5x6.0) | 
| 包/箱: | 8-SOIC (0.173", 4.40mm Width) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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