English
简体中文
OSC XO 1MHZ 3.3V HCMOS
CPS19-NO00A10-SNCCWTWF-AI0RMVAR-W0000-S
SWITCH PUSH SPST-NO 100MA 42V
MOSFET N-CH 600V 3.6A D2PAK
IC GATE DRVR HALF-BRIDGE 10DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.2Ohm @ 2.2A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 510 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 74W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4880DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 13A 8-SOIC |
|
IRFBF20Vishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
IRF3704ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A TO220AB |
|
IRFZ48RVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
GA100JT12-227GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
|
IRLR3715ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
SI7388DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
NVMFS6B03NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
|
IXFK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264AA |
|
IRF3805L-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |
|
IRF3315IR (Infineon Technologies) |
MOSFET N-CH 150V 27A TO220AB |
|
NTP75N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB |
|
BSS138W L6433IR (Infineon Technologies) |
MOSFET N-CH 60V 280MA SOT323-3 |