English
简体中文
MEMS OSC XO 155.5200MHZ LVCMOS
MOSFET N-CH 55V 53A TO247AC
MOSFET N-CH 100V 57A D2PAK
CONN HEADER VERT 16POS 2.54MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 53A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 29A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQB10N60CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9.5A D2PAK |
|
NP70N10KUF-E1-AYRenesas Electronics America |
MOSFET N-CH 100V 70A TO263 |
|
NTD50N03R-035Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 7.8A/45A IPAK |
|
BSS110Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 170MA TO92-3 |
|
IPU60R1K5CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.1A TO251-3 |
|
AON7418_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 46A/50A 8DFN |
|
BSP373 E6327IR (Infineon Technologies) |
MOSFET N-CH 100V 1.7A SOT223-4 |
|
IRL1004STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 130A D2PAK |
|
SI4038DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 42.5A 8SO |
|
IRFZ48ZSIR (Infineon Technologies) |
MOSFET N-CH 55V 61A D2PAK |
|
AO6704Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 3.6A 6TSOP |
|
2SK2221-ERenesas Electronics America |
MOSFET N-CH 200V 8A TO3P |
|
IXKH20N60C5Wickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247AD |