English
简体中文
MOSFET P-CH 12V 9A 8DFN
CONN RCPT HSNG MALE 4POS PNL MT
8T 4C 4#16 RECP
IC CHIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 20mOhm @ 9A, 4.5V |
| vgs(th) (最大值) @ id: | 850mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 2100 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (3x2) |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP07N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO220-3 |
|
SI4884BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 16.5A 8SO |
|
IRFZ24NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 17A D2PAK |
|
STB22NS25ZT4STMicroelectronics |
MOSFET N-CH 250V 22A D2PAK |
|
STB200N4F3STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK |
|
IRF9Z24NSIR (Infineon Technologies) |
MOSFET P-CH 55V 12A D2PAK |
|
SI7388DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
|
AON7446Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 3.3A/8A 8DFN |
|
FQU3N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A IPAK |
|
APTC90DAM60T1GMicrosemi |
MOSFET N-CH 900V 59A SP1 |
|
IRFR210BTM_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 2.7A DPAK |
|
DMN3031LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9A 8SOP |
|
EPC2015EPC |
GANFET N-CH 40V 33A DIE OUTLINE |