English
简体中文
MEMS OSC XO 66.66666MHZ H/LVCMOS
XTAL OSC VCXO 50.0000MHZ LVPECL
MOSFET N-CH 240V 260MA SOT89-4
INSULATION DISPLACEMENT TERMINAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 240 V |
| 电流 - 连续漏极 (id) @ 25°c: | 260mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6Ohm @ 260mA, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 108µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 97 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-SOT89-4-2 |
| 包/箱: | TO-243AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6266Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 13A/30A 8DFN |
|
ZVN4310ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 900MA E-LINE |
|
IRFR812PBFIR (Infineon Technologies) |
MOSFET N-CH 500V 3.6A DPAK |
|
FQB13N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.8A D2PAK |
|
STS19N3LLH6STMicroelectronics |
MOSFET N-CH 30V 19A 8SO |
|
IRF1405ZTRLVishay / Siliconix |
MOSFET N-CH 55V 75A TO220AB |
|
IRF7459TRIR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |
|
IRF7809PBFIR (Infineon Technologies) |
MOSFET N-CH 28V 14.5A 8SO |
|
TSM13N50ACZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 500V 13A TO220 |
|
IRF6712STR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 17A DIRECTFET |
|
IRFIZ24GVishay / Siliconix |
MOSFET N-CH 60V 14A TO220-3 |
|
AOTF8T50P_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO220F |
|
2SK3707Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A TO220ML |