English
简体中文
OSC XO 50MHZ 3.3V HCMOS
MOSFET N-CH 60V 6.1A VS-6
IC DRIVER 2/0 24TQFN
CONN BARRIER STRIP 6CIRC 0.438"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI-H |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 59mOhm @ 3.1A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 830 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | VS-6 (2.9x2.8) |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI60R600CPAKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.1A TO262-3 |
|
PHK12NQ10T,518NXP Semiconductors |
MOSFET N-CH 100V 11.6A 8SO |
|
NDP4060LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A TO220-3 |
|
IRFR3704TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 75A DPAK |
|
FDW254PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 9.2A 8TSSOP |
|
SI8461DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 4MICROFOOT |
|
HUFA75345S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
BSS123LT3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IRFR420TRRVishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
FQD5N50CTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A DPAK |
|
SI3812DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 2A 6TSOP |
|
NVMFS5C450NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
IRFP354PBFVishay / Siliconix |
MOSFET N-CH 450V 14A TO247-3 |