English
简体中文
IC RAM 4MBIT PARALLEL 44TSOP2
MOSFET N-CH 1200V 19A SOT227
CBL COILED 6'
TA45-2R SERIES CIRCUIT BREAKER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 570mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 290 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 520W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227 |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIRA34DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
IXFV12N90PWickmann / Littelfuse |
MOSFET N-CH 900V 12A PLUS220 |
|
IRF7453PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 2.2A 8SO |
|
SPI73N03S2L-08IR (Infineon Technologies) |
MOSFET N-CH 30V 73A TO262-3 |
|
FQA5N90_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 5.8A TO3P |
|
IRF630NLIR (Infineon Technologies) |
MOSFET N-CH 200V 9.3A TO262 |
|
FQD10N20CTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.8A DPAK |
|
APT5020SVRGMicrosemi |
MOSFET N-CH 500V 26A D3PAK |
|
IXFT6N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO268 |
|
APT17N80SC3GMicrosemi |
MOSFET N-CH 800V 17A D3PAK |
|
IRF644NLPBFVishay / Siliconix |
MOSFET N-CH 250V 14A I2PAK |
|
BSS138N E6908IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
IRF7460IR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |