English
简体中文
MEMS OSC XO 31.9680MHZ LVCMOS LV
MOSFET N-CH 12V 40A PPAK SO-8
CONN HEADER VERT 21POS 2.54MM
CIRCUIT BREAKER MAG-HYDR LEVER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 3.8mOhm @ 15A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 3720 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.2W (Ta), 36W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF3205ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
IPC60N04S406ATMA1Rochester Electronics |
MOSFET N-CH 40V 60A TDSON-8-23 |
|
STF100N10F7STMicroelectronics |
MOSFET N CH 100V 45A TO-220FP |
|
SIHG47N60AEF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 40A TO247AC |
|
IRLZ24NSPBFRochester Electronics |
MOSFET N-CH 55V 18A D2PAK |
|
RQ1C075UNTRROHM Semiconductor |
MOSFET N-CH 20V 7.5A TSMT8 |
|
STF80N10F7STMicroelectronics |
MOSFET N-CH 100V 40A TO220FP |
|
DMN3025LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.9A 6UDFN |
|
IPI600N25N3GAKSA1Rochester Electronics |
MOSFET N-CH 250V 25A TO262-3 |
|
RSS070N05FRATBROHM Semiconductor |
MOSFET N-CH 45V 7A 8SOP |
|
PMCM6501VNEZNexperia |
MOSFET N-CH 12V 7.3A 6WLCSP |
|
CSD16321Q5Texas Instruments |
MOSFET N-CH 25V 31A/100A 8VSON |
|
IPB03N03LAGRochester Electronics |
N-CHANNEL POWER MOSFET |