English
简体中文
RES 1.43M OHM 0.5% 1/8W 0805
RES 14.3K OHM 0.5% 1/10W 0402
ERL-20 10.5K 1% T-1 RLR20C1052FR
MOSFET N-CH 60V 79A TO220AB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 79A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8.4mOhm @ 47A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 69 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2290 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMN3A01ZTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.2A SOT89 |
|
UPA654TT-E1-ARochester Electronics |
MOSFET P-CH 12V 6WSOF |
|
AON6502Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 49A/85A 8DFN |
|
IPB180N04S4H0ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7-3 |
|
SQD50N04-5M6L_GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252AA |
|
STB36N60M6STMicroelectronics |
MOSFET N-CH 600V 30A D2PAK |
|
SQ4840EY-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 20.7A 8SO |
|
IXFT340N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 340A TO268 |
|
BUK664R4-55C,118Nexperia |
MOSFET N-CH 55V 100A D2PAK |
|
NTE2934NTE Electronics, Inc. |
MOSFET N-CH 400V 11.5A TO3PML |
|
SI2319DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
NDF11N50ZGRochester Electronics |
MOSFET N-CH 500V 12A TO220FP |
|
APT10035LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 28A TO264 |