English
简体中文
XTAL OSC VCXO 204.8000MHZ LVPECL
MEMS OSC XO 8.1920MHZ LVCM LVTTL
MOSFET N CH 100V 110A TO-220
IC DGT POT 10KOHM 129TAP 14TSSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VII |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 55A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5500 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHB10N40D-GE3Vishay / Siliconix |
MOSFET N-CH 400V 10A TO263 |
|
IXTT10N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO268 |
|
IRFR120NTRRPBFRochester Electronics |
MOSFET N-CH 100V 9.4A DPAK |
|
SQ7414AEN-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 5.6A PPAK 1212-8 |
|
STB8NM60DSTMicroelectronics |
MOSFET N-CH 600V 8A D2PAK |
|
AOTF2142LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 112A TO220F |
|
IRFP140NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO247AC |
|
MMFTN3018WDiotec Semiconductor |
MOSFET N-CH 30V 100MA SOT323 |
|
FDC637ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.2A SUPERSOT6 |
|
SIUD402ED-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 1A PPAK 0806 |
|
IPLK60R1K0PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 5.2A THIN-PAK |
|
2N6660Roving Networks / Microchip Technology |
MOSFET N-CH 60V 410MA TO39 |
|
NP60N055VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 60A TO252-3 |