English
简体中文
MOSFET N-CH 600V 34A TO220
MOSFET N-CH 800V 6.5A TO220-3
P51-1000-A-R-I36-4.5OVP-000-000
SENSOR 1000PSI M12-1.0 6G 4.5V
CONN SOCKET 15-17AWG CRIMP TIN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2-EP |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 87mOhm @ 17A, 10V |
| vgs(th) (最大值) @ id: | 4.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2370 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
TPWR8004PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8DSOP |
|
BUK7880-55A/CUXNexperia |
MOSFET N-CH 55V 7A SOT223 |
|
FDPF16N50TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 16A TO220F |
|
R6511ENJTLROHM Semiconductor |
MOSFET N-CH 650V 11A LPTS |
|
IXTH10N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247 |
|
FDMS7560SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
IRFS4321PBFRochester Electronics |
MOSFET N-CH 150V 85A D2PAK |
|
FQD3P50TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
|
IRL1404STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 160A D2PAK |
|
IXTA2R4N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 2.4A TO263 |
|
IRLR024PBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
STP150NF55STMicroelectronics |
MOSFET N-CH 55V 120A TO220AB |