







MOSFET N-CH 100V 120A TO220-3
CONN HEADER SMD 8POS 1.25MM
CORD 14AWG IEC 320-C14 - C13 10'
2MM LOW PROFILE STRIPS
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 120µA |
| 栅极电荷 (qg) (max) @ vgs: | 91 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6540 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 190W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMN1019UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 10.7A TSOT26 |
|
|
TK35A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 35A TO220SIS |
|
|
STP42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
|
IRFR1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
|
TPWR8004PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8DSOP |
|
|
BUK7880-55A/CUXNexperia |
MOSFET N-CH 55V 7A SOT223 |
|
|
FDPF16N50TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 16A TO220F |
|
|
R6511ENJTLROHM Semiconductor |
MOSFET N-CH 650V 11A LPTS |
|
|
IXTH10N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247 |
|
|
FDMS7560SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
|
IRFS4321PBFRochester Electronics |
MOSFET N-CH 150V 85A D2PAK |
|
|
FQD3P50TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
|
|
IRL1404STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 160A D2PAK |