English
简体中文
MEMS OSC XO 66.66666MHZ H/LVCMOS
MOSFET N-CH 60V 120A I2PAK
DIODE ZENER 36V 3W DO216AA
CONN PCMCIA CARD PUSH-PUSH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 114 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8920 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 293W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF75637P3Rochester Electronics |
MOSFET N-CH 100V 44A TO220-3 |
|
SI4488DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 3.5A 8SO |
|
IPB04N03LATIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
SSM3K15ACTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3C |
|
IRLR3802TRPBFRochester Electronics |
IRLR3802 - HEXFET POWER MOSFET |
|
SQ2389ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
FDS6900SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISS73DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.4A/16.2A PPAK |
|
STP4LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 3A TO220 |
|
NTB6413ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK |
|
DN2450N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 230MA TO243AA |
|
STI22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A I2PAK |
|
IRFH7110TRPBFRochester Electronics |
MOSFET N-CH 100V 11A/58A 8PQFN |