







MOSFET N-CH 240V 190MA TO92-3
2MM DOUBLE ROW MALE IDC ASSEMBLY
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 240 V |
| 电流 - 连续漏极 (id) @ 25°c: | 190mA (Tj) |
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
| rds on (max) @ id, vgs: | 10Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 125 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92-3 |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
PSMN7R0-30MLC,115Nexperia |
MOSFET N-CH 30V 67A LFPAK33 |
|
|
SI4156DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A 8SO |
|
|
NP80N055MDG-S18-AYRochester Electronics |
MOSFET N-CH 55V 80A TO220 |
|
|
FDP5645Rochester Electronics |
MOSFET N-CH 60V 80A TO220-3 |
|
|
IRF620PBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A TO220AB |
|
|
IXFZ520N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 465A DE475 |
|
|
IRFF332Rochester Electronics |
3A, 400V, 1.5OHM, N-CHANNEL POWE |
|
|
APT34F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A TO247 |
|
|
SIA447DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |
|
|
SIHG47N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AC |
|
|
DMT10H072LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |
|
|
IRFHM4234TRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
|
RSD050N06TLROHM Semiconductor |
MOSFET N-CH 60V 5A CPT3 |