







NMP CONFIGURABLE POWER SUPPLY 12
XTAL OSC VCXO 153.6000MHZ HCSL
XTAL OSC VCXO 148.5000MHZ HCSL
POWER FIELD-EFFECT TRANSISTOR, 2
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BUK9245-55A,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
|
IPP16CN10LGXKSA1Rochester Electronics |
MOSFET N-CH 100V 54A TO220-3 |
|
|
FDD9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A DPAK |
|
|
G3R160MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 21A TO247-3 |
|
|
BTS282ZE3180ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BSS138BKW/DG/B2135Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
IPL60R199CPAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.4A 4VSON |
|
|
BSC035N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/100A TDSON |
|
|
NTTFS5C453NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A/107A 8WDFN |
|
|
FDMS86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8PQFN |
|
|
APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |
|
|
RQ1A070APTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
|
CMS61P06CT-HFComchip Technology |
MOSFET P-CH 60V 61A TO220AB |