English
简体中文
MOSFET N-CH 60V 17A TO220AB
CONN BACKSHELL 15POS 180DEG SHLD
CONN PLUG MALE 13P SILV SLDR CUP
CERAMIC CRYSTAL SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 100mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 640 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR812TRPBFIR (Infineon Technologies) |
MOSFET N-CH 500V 3.6A DPAK |
|
FDS6375Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 8A 8SOIC |
|
FDD86367Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 100A DPAK |
|
SI4800BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A 8SO |
|
FQPF5N60Rochester Electronics |
MOSFET N-CH 600V 2.8A TO220F |
|
NX138AKVLNexperia |
MOSFET N-CH 60V 190MA TO236AB |
|
IRFH5020TRPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 5.1A 8PQFN |
|
NVMFS5C410NAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |
|
FQA9P25Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 10.5A TO3P |
|
RCX080N25ROHM Semiconductor |
MOSFET N-CH 250V 8A TO220FM |
|
DMP2130LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.4A SOT-26 |
|
DMP2170U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.1A SOT23 |
|
IPD65R225C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO252-3 |