







MOSFET N-CH 20V 1A X2-DFN1006-3
PWR ENT MOD RCPT IEC320-C14 PNL
CONN PCMCIA CARD PUSH-PULL R/A
XTAL OSC XO 50.0000MHZ CMOS SMD
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 320mOhm @ 500mA, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.89 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 71 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 520mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | X2-DFN1006-3 |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRL530NSPBFRochester Electronics |
HEXFET POWER MOSFET |
|
|
FDC640PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.5A SUPERSOT6 |
|
|
BSC100N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 11.4/90A 8TDSON |
|
|
SIDR626DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 42.8A/100A PPAK |
|
|
BUZ101LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
DMN6140LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
|
IRLM220ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 1.13A SOT223-4 |
|
|
FDWS9508L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 80A 8PQFN |
|
|
IXTT96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO268 |
|
|
AO5404EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 500MA SC89-3 |
|
|
SIA441DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 12A PPAK SC70-6 |
|
|
BUK968R3-40E,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
|
IPA60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A TO220 |