English
简体中文
RES SMD 31.2K OHM 0.1% 1/4W 1206
MOSFET N-CH 55V 5.5A SOT223
TTL,ANGLE30,CLASS1M,FOCUS:40 CM
PATCHCORD BCAT6+ CMR LTGN 28FT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 137mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 320 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 8W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB2670Rochester Electronics |
MOSFET N-CH 200V 19A TO263AB |
|
SQJ422EP-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 75A PPAK SO-8 |
|
STL15N65M5STMicroelectronics |
MOSFET N-CH 650V 10A POWERFLAT |
|
BUK7C06-40AITE,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IXTH130N10TWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO247 |
|
BSC520N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TDSON-8-5 |
|
IXFX40N90PWickmann / Littelfuse |
MOSFET N-CH 900V 40A PLUS247-3 |
|
SISS22DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 25A/90.6A PPAK |
|
FQA14N30Rochester Electronics |
MOSFET N-CH 300V 15A TO3P |
|
FDMC8321LDCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A DLCOOL33 |
|
UJ4C075018K3SUnitedSiC |
SICFET N-CH 750V 81A TO247-3 |
|
BSZ050N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 15A/40A 8TSDSON |
|
CSD18502KCSTexas Instruments |
MOSFET N-CH 40V 100A TO220-3 |