







MOSFET N-CH 500V 27A D3PAK
CONN RCPT MALE 10POS GOLD CRIMP
.050 SOCKET DISCRETE CABLE ASSEM
CONN JACK 1PORT 100 BASE-TX PCB
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 13.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 58 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2596 pF/m @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D3PAK |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUIRFN8405TRIR (Infineon Technologies) |
MOSFET N-CH 40V 95A PQFN |
|
|
SIHB24N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 24A D2PAK |
|
|
SIHA15N65E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 650V 15A TO220 |
|
|
TSM4N60ECP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO252 |
|
|
BUK7E07-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A I2PAK |
|
|
IRF3708PBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
|
TPIC5403DWRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FQAF6N90Rochester Electronics |
MOSFET N-CH 900V 4.5A TO3PF |
|
|
AON6512Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 54A/150A 8DFN |
|
|
IXFK32N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 32A TO264AA |
|
|
STWA30N65DM6AGSTMicroelectronics |
MOSFET N-CH 650V 28A TO247 |
|
|
TSM60N380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 11A TO251 |
|
|
SIRA60DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |