English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH3™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 525 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 980mOhm @ 3.1A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 737 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFD6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A/25A 8DFN DL |
|
BSS214NWH6327Rochester Electronics |
BSS214 - 250V-600V SMALL SIGNAL |
|
IRFB3306GPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
SIHFL110TR-BE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
IPA60R099C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-FP |
|
MMBF170Q-13-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 500MA SOT23 |
|
NDF10N60ZHRochester Electronics |
MOSFET N-CH 600V 10A TO220FP |
|
AOD1R4A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 3.8A TO252 |
|
FQI10N60CTURochester Electronics |
MOSFET N-CH 600V 9.5A I2PAK |
|
IRFR420TRLPBFVishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
IPP220N25NFDAKSA1IR (Infineon Technologies) |
MOSFET N-CH 250V 61A TO220-3 |
|
APT5018SLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 27A D3PAK |
|
AUIRFN8405TRIR (Infineon Technologies) |
MOSFET N-CH 40V 95A PQFN |
