







MEMS OSC XO 24.5760MHZ H/LV-CMOS
MOSFET N-CH 30V 4A 6DFN
4144-A TOWER WATER SUPPLY GRN/ST
CONN HEADER VERT 50POS 2.54MM
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
| rds on (max) @ id, vgs: | 54mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 245 pF @ 15 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.8W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-DFN (1.6x1.6) |
| 包/箱: | 6-PowerUFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FQB34N20LTMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
|
IRLR3110ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
|
NTD78N03-35GRochester Electronics |
MOSFET N-CH 25V 11.4A/78A IPAK |
|
|
IPS70R1K4P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
|
IRF610STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
|
DMT3009UFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.6A/30A PWRDI |
|
|
NVTA7002NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 154MA SC75 |
|
|
FDD9411L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 25A TO252 |
|
|
CSD23382F4TTexas Instruments |
MOSFET P-CH 12V 3.5A 3PICOSTAR |
|
|
IXTH30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO247 |
|
|
FQB12N60CTMRochester Electronics |
MOSFET N-CH 600V 12A D2PAK |
|
|
AO4407AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
|
RM135N100HDRectron USA |
MOSFET N-CH 100V 135A TO263-2 |