English
简体中文
MEMS OSC XO 49.1520MHZ H/LV-CMOS
XTAL OSC VCXO 125.0000MHZ HCSL
SICFET N-CH 650V 33A H2PAK-7
SENSOR 500PSI 1/4-18NPT .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 18V |
| rds on (max) @ id, vgs: | 105mOhm @ 20A, 18V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 18 V |
| vgs (最大值): | +22V, -10V |
| 输入电容 (ciss) (max) @ vds: | 1230 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | H2PAK-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD6N50FTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK |
|
FDBL0110N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 300A 8HPSOF |
|
MTD2N50E1Rochester Electronics |
TRANS MOSFET N-CH 500V 2A RAIL |
|
NDP7060Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220-3 |
|
FDD24AN06LA0Rochester Electronics |
MOSFET N-CH 60V 7.1A/40A TO252AA |
|
2N7002AQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 180MA SOT23 |
|
NTD4865NT4GRochester Electronics |
MOSFET N-CH 25V 8.5A/44A DPAK |
|
STD10NF30STMicroelectronics |
MOSFET N-CHANNEL 300V 10A DPAK |
|
TSM070NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 15A/75A 8PDFN |
|
STF21NM60NDSTMicroelectronics |
MOSFET N-CH 600V 17A TO220FP |
|
AUIRLR3410TRRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
TK8A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 7.5A TO220SIS |
|
SIHB12N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A D2PAK |