类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 3.8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 70mOhm @ 3.8A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1008 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.08W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFD14N05SM9A_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMTH10H010SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 100A TO220AB |
|
STW12N170K5STMicroelectronics |
MOSFET N-CH 1700V 5A TO247 |
|
FDMS2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.5A/27A 8MLP |
|
IPB009N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 180A TO263-7 |
|
SQS411ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8W |
|
SSM3K15F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA S-MINI |
|
SI5441BDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
|
IRFS38N20DTRLPIR (Infineon Technologies) |
MOSFET N-CH 200V 43A D2PAK |
|
IRL7486MTRPBFRochester Electronics |
IRL7486M - 12V-300V N-CHANNEL PO |
|
RSS070P05FRATBROHM Semiconductor |
MOSFET P-CH 45V 7A 8SOP |
|
R6024ENJTLROHM Semiconductor |
MOSFET N-CH 600V 24A LPTS |
|
STFU15NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A TO220FP |