English
简体中文
MEMS OSC XO 33.3330MHZ H/LV-CMOS
MOSFET P-CH 12V 4.1A SOT23-3
SCR 800V 12A TO263
CONN HEADER R/A 15POS 2.54MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 32mOhm @ 5.3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD20N06TFRochester Electronics |
MOSFET N-CH 60V 16.8A DPAK |
|
FDP032N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 75V 120A TO220 |
|
IRLL2705TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 3.8A SOT223 |
|
IRFR7546TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 56A DPAK |
|
APT6013JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 39A ISOTOP |
|
IPP65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMNH4011SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 50A TO252 |
|
CPC3982TTRWickmann / Littelfuse |
MOSFET N-CH 800V SOT23 |
|
MCQ4953-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 5.1A 8SOP |
|
HUF76419D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
NTNUS3171PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 150MA SOT1123 |
|
PMF250XNEXNexperia |
MOSFET N-CH 30V 1A SOT323 |
|
TK6P53D(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 525V 6A DPAK |