







 
                            XTAL OSC VCXO 96.0000MHZ LVDS
 
                            MOSFET N-CH 900V 3A DPAK
| 类型 | 描述 | 
|---|---|
| 系列: | MDmesh™ | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 900 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 2.1Ohm @ 1A, 10V | 
| vgs(th) (最大值) @ id: | 5V @ 100µA | 
| 栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 173 pF @ 100 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 60W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | DPAK | 
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | STL19N65M5STMicroelectronics | MOSFET N-CH 650V 12.5A POWERFLAT | 
|   | SPP80N03S2-03Rochester Electronics | MOSFET N-CH 30V 80A TO220-3 | 
|   | BTS132E3045ANTMA1Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | SQJ407EP-T1_GE3Vishay / Siliconix | MOSFET P-CH 30V 60A PPAK SO-8 | 
|   | BSC030N03MSGRochester Electronics | BSC030N03 - 12V-300V N-CHANNEL P | 
|   | SUP90220E-GE3Vishay / Siliconix | MOSFET N-CH 200V 64A TO220AB | 
|   | SSM3K361R,LFToshiba Electronic Devices and Storage Corporation | MOSFET N-CH 100V 3.5A SOT-23F | 
|   | IXFA80N25X3Wickmann / Littelfuse | MOSFET N-CH 250V 80A TO263AA | 
|   | NVMYS021N06CLTWGSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 9.8A/27A 4LFPAK | 
|   | FDD86381-F085Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 80V 25A DPAK | 
|   | TPIC1301DWRochester Electronics | N-CHANNEL POWER MOSFET | 
|   | IPD320N20N3GATMA1IR (Infineon Technologies) | MOSFET N-CH 200V 34A TO252-3 | 
|   | MCH6336-TL-E-ONRochester Electronics | MOSFET P-CH 12V 5A SC88FL/ MCPH6 |