English
简体中文
FUSE CERM 8A 250VAC 125VDC 3AB
MOSFET N-CH 500V 10A TO220AB
DIODE GEN PURP 300V 1A SUB SMA
CONN D-SUB PLUG 25POS R/A SLDR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 520mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1390 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT6025SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 25A D3PAK |
|
IRFPC60Vishay / Siliconix |
MOSFET N-CH 600V 16A TO247-3 |
|
TK100L60W,VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 100A TO3P |
|
IPDD60R055CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 52A HDSOP-10 |
|
FDS6676ASRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFA36N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 36A TO263AA |
|
CSD18531Q5ATexas Instruments |
MOSFET N-CH 60V 19A/100A 8VSON |
|
BUK9M6R7-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
BUK9Y11-80EXNexperia |
MOSFET N-CH 80V 84A LFPAK56 |
|
IPD80R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
|
SIR510DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 100 V (D-S) MOSFET POW |
|
NTMFS4931NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 23A/246A 5DFN |
|
IPA60R950C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO220-FP |