







XTAL OSC VCXO 25.0000MHZ LVDS
MEMS OSC XO 10.0000MHZ LVCMOS LV
MOSFET N-CH 55V 17A TO252AA
IC TRANSCEIVER FULL 1/1 8DFN
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 75mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 370 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252AA |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SQS407ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 16A PPAK1212-8W |
|
|
BSP372NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.8A SOT223-4 |
|
|
FQU1N60TURochester Electronics |
MOSFET N-CH 600V 1A IPAK |
|
|
STP50N65DM6STMicroelectronics |
MOSFET N-CH 650V 33A TO220 |
|
|
ZXM62P02E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.3A SOT23-6 |
|
|
BUK9245-55A/C1118Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
AUIRLR014NTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
|
MTB3N60ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXTP50N25TWickmann / Littelfuse |
MOSFET N-CH 250V 50A TO220AB |
|
|
SQD100N04-3M6_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
|
AO3403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
|
BUK7528-100A,127Rochester Electronics |
PFET, 47A I(D), 100V, 0.028OHM, |
|
|
TK3A65DA(STA4,QM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2.5A TO220SIS |