English
简体中文
MEMS OSC XO 75.0000MHZ H/LV-CMOS
N-CHANNEL POWER MOSFET
SINGLE-CHANNEL HIGH SPEED TRANSI
CONN RCPT MALE 15POS GOLD CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO4447AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 17A 8SOIC |
|
IXFT150N25X3HVWickmann / Littelfuse |
MOSFET N-CH 250V 150A TO268HV |
|
SCT3040KW7TLROHM Semiconductor |
TRANS SJT N-CH 1200V 56A TO263-7 |
|
BSZ0902NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 19A/40A TSDSON |
|
TP2104K1-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 160MA TO236AB |
|
DMNH10H028SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 60A TO220AB |
|
SIRA74DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 24A/81.2A PPAK |
|
SQJ136ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 350A PPAK SO-8 |
|
IPB100N12S305ATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO263-3 |
|
IRFR2407TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
RD3G600GNTLROHM Semiconductor |
MOSFET N-CH 40V 60A TO252 |
|
FDD6035ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDD03N80Z-1GRochester Electronics |
MOSFET N-CH 800V 2.9A IPAK |