







 
                            CRYSTAL 32.0000MHZ 12PF SMD
 
                            XTAL OSC VCXO 10.2400MHZ LVDS
 
                            MOSFET P-CHANNEL 30V 30A 8DFN
 
                            DIODE GEN PURP 100V 250MA SOD523
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 10mOhm @ 15A, 10V | 
| vgs(th) (最大值) @ id: | 2V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | - | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 2150 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 40W (Ta) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-DFN-EP (3x3) | 
| 包/箱: | 8-PowerVDFN | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IPT60R125CFD7XTMA1IR (Infineon Technologies) | MOSFET N-CH 600V 21A 8HSOF | 
|   | SMMBFJ310LT1Rochester Electronics | RF N-CHANNEL, JUNCTION FET | 
|   | BSZ058N03LSGATMA1IR (Infineon Technologies) | MOSFET N-CH 30V 15A/40A 8TSDSON | 
|   | CSD16570Q5BTTexas Instruments | MOSFET N-CH 25V 100A 8VSON | 
|   | PXP6R7-30QLJNexperia | PXP6R7-30QL/SOT8002/MLPAK33 | 
|   | NVMFS5C604NLAFT1GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 287A 5DFN | 
|   | RM7N600LDRectron USA | MOSFET N-CHANNEL 600V 7A TO252-2 | 
|   | IXFB300N10PWickmann / Littelfuse | MOSFET N-CH 100V 300A PLUS264 | 
|   | TK55S10N1,LXHQToshiba Electronic Devices and Storage Corporation | MOSFET N-CH 100V 55A DPAK | 
|   | IXFB44N100PWickmann / Littelfuse | MOSFET N-CH 1000V 44A PLUS264 | 
|   | NTTFS4823NTAGRochester Electronics | MOSFET N-CH 30V 7.1A/50A 8WDFN | 
|   | IXFN100N20Wickmann / Littelfuse | MOSFET N-CH 200V 100A SOT-227B | 
|   | SIHD14N60E-GE3Vishay / Siliconix | MOSFET N-CH 600V 13A DPAK |