English
简体中文
MEMS OSC XO 38.4000MHZ H/LV-CMOS
MOSFET N-CH 600V 21A TO220AB
CONN HEADER SMD 88POS 1.27MM
CABLE WRAP 3/16" NATURAL 100'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 86 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1920 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 227W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP13AN06A0_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP50R280CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 13A TO220-3 |
|
AUIRFS6535TRLRochester Electronics |
MOSFET N-CH 300V 19A D2PAK |
|
TK110A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A TO220SIS |
|
BSP125L6327HTSA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IPD088N04LGBTMA1Rochester Electronics |
MOSFET N-CH 40V 50A TO252-3 |
|
PMZ1000UN,315Nexperia |
MOSFET N-CH 30V 480MA DFN1006-3 |
|
STS11N3LLH5STMicroelectronics |
MOSFET N-CH 30V 11A 8SO |
|
SIRA80DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
FDD3682Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.5/32A TO252AA |
|
NTD4855N-1GRochester Electronics |
MOSFET N-CH 25V 14A/98A IPAK |
|
PMV100XPEARNexperia |
MOSFET P-CH 20V 2.4A TO236AB |
|
IRFR010PBFVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |