English
简体中文
MEMS OSC XO 38.0000MHZ H/LV-CMOS
XTAL OSC XO 126.8000MHZ CMOS SMD
MOSFET N-CH 1000V 12A D3PAK
IC REG LINEAR 2V 200MA 6HSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 900mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 71 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 1969 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | D3 [S] |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF640NSPBFRochester Electronics |
MOSFET N-CH 200V 18A D2PAK |
|
MIC94030YM4TRRochester Electronics |
MOSFET P-CH 16V 1A SOT143 |
|
STU9HN65M2STMicroelectronics |
MOSFET N-CH 650V 5.5A IPAK |
|
HUFA76419S3STRochester Electronics |
MOSFET N-CH 60V 29A D2PAK |
|
IPD65R650CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7A TO252-3 |
|
DMTH6004SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 25A PWRDI5060 |
|
IPD60R210CFD7ATMA1IR (Infineon Technologies) |
MOSFET N CH |
|
STF33N60DM6STMicroelectronics |
MOSFET N-CH 600V 25A TO220FP |
|
BFL4004-1ERochester Electronics |
MOSFET N-CH 800V 4.3A TO220F-3FS |
|
MCU12P10A-TPMicro Commercial Components (MCC) |
P-CHANNEL MOSFET, DPAK |
|
IXTT20N50DWickmann / Littelfuse |
MOSFET N-CH 500V 20A TO268 |
|
PSMN9R5-100PS,127Nexperia |
MOSFET N-CH 100V 89A TO220AB |
|
TK50P03M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A DP |