English
简体中文
MEMS OSC XO 12.0000MHZ H/LV-CMOS
MOSFET N-CH 60V 10A 6UDFN
IC GATE DRVR LOW-SIDE 8MSOP
CONN HDR 72POS 0.05 STACK SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1081 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 900mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7M27-80EXNexperia |
MOSFET N-CH 80V 30A LFPAK33 |
|
MCH3377-TL-HRochester Electronics |
MOSFET P-CH 20V 3A 3MCPH |
|
NP36P06KDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 36A TO263 |
|
DMN2025UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.5A 6UDFN |
|
VN10KN3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
|
IRFP140Rochester Electronics |
MOSFET N-CH 100V 31A TO247-3 |
|
3LN03M-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FDU8878Rochester Electronics |
MOSFET N-CH 30V 11A/40A IPAK |
|
ATP404-TL-HRochester Electronics |
MOSFET N-CH 60V 95A ATPAK |
|
BSC018NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 29A/100A TDSON |
|
SCTW90N65G2VSTMicroelectronics |
SICFET N-CH 650V 90A HIP247 |
|
SQ2389ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 4.1A SOT23-3 |
|
BUK9535-55A127Rochester Electronics |
N-CHANNEL POWER MOSFET |