







 
                            RES 110K OHM 0.5% 1/16W 0402
 
                            MOSFET N-CH 30V 10A 8VSOF
 
                            CONN HEADER SMD 20POS 2.54MM
 
                            LUW CVBP.CE-8K6L-IMJM-1-350-R33-Z-SK
LED LX ECE
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Bulk | 
| 零件状态: | Obsolete | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | - | 
| rds on (max) @ id, vgs: | 13.2mOhm @ 10A, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 1mA | 
| 栅极电荷 (qg) (max) @ vgs: | 10.8 nC @ 5 V | 
| vgs (最大值): | - | 
| 输入电容 (ciss) (max) @ vds: | 1.1 pF @ 15 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 1W (Ta) | 
| 工作温度: | 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-VSOF | 
| 包/箱: | 8-SMD, Flat Lead | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | BSC050N10NS5ATMA1IR (Infineon Technologies) | MOSFET N-CH 100V 16A/100A TDSON | 
|   | SQJA86EP-T1_GE3Vishay / Siliconix | MOSFET N-CH 80V 30A PPAK SO-8 | 
|   | RQ3E100BNTBROHM Semiconductor | MOSFET N-CH 30V 10A 8HSMT | 
|   | FQU1N50TURochester Electronics | MOSFET N-CH 500V 1.1A IPAK | 
|   | RJK0236DPA-00#J5ARochester Electronics | MOSFET N-CH 25V 50A 8DFN | 
|   | FDT86102LZSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 6.6A SOT223-4 | 
|   | IRF7606TRIR (Infineon Technologies) | MOSFET P-CH 30V 3.6A MICRO8 | 
|   | CSD18535KCSTexas Instruments | MOSFET N-CH 60V 200A TO220-3 | 
|   | FCI11N60Rochester Electronics | MOSFET N-CH 600V 11A I2PAK | 
|   | FQI2P25TURochester Electronics | MOSFET P-CH 250V 2.3A I2PAK | 
|   | DMN6140L-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 60V 1.6A SOT23 | 
|   | DMT6013LFDF-7Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 60V 10A 6UDFN | 
|   | BUK7M27-80EXNexperia | MOSFET N-CH 80V 30A LFPAK33 |