







FIXED IND 10UH 1.8A 120 MOHM SMD
MEMS OSC XO 25.000625MHZ H/LV-CM
MOSFET N-CH 150V 51A D2PAK
MULTI-PAIR 8COND 24AWG SHLD 500'
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 51A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 32mOhm @ 36A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 89 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2770 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.8W (Ta), 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FCPF290N80Rochester Electronics |
MOSFET N-CH 800V 17A TO220F |
|
|
APT24M80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 25A TO247 |
|
|
RCJ300N20TLROHM Semiconductor |
MOSFET N-CH 200V 30A LPTS |
|
|
SPB08P06PGATMA1Rochester Electronics |
12V-250V P-CHANNEL POWER MOSFET |
|
|
FDD8896-F085Rochester Electronics |
MOSFET N-CH 30V 17A/94A TO252AA |
|
|
DMP1045U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 4A SOT23 |
|
|
ZXMN4A06GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 5A SOT223 |
|
|
AONS36346Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 26.5A/60A 8DFN |
|
|
AUIRFZ24NSIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
|
BUK6Y14-40PXNexperia |
MOSFET P-CH 40V 64A LFPAK56 |
|
|
STF8N80K5STMicroelectronics |
MOSFET N-CH 800V 6A TO220FP |
|
|
IPD60R3K3C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 1.7A TO252-3 |
|
|
SISS08DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 53.9/195.5A PPAK |