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CRYSTAL 24.5760MHZ 13PF SMD
MOSFET N-CH 600V 520MA/12A 4DFN
DIODE GEN PURP 200V 6A TO277A
CONN BARRIER STRP 13CIRC 0.325"
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| 类型 | 描述 |
|---|---|
| 系列: | aMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 520mA (Ta), 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.6 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 717 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 8.3W (Ta), 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-DFN-EP (8x8) |
| 包/箱: | 4-PowerTSFN |
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