







 
                            LED XLAMP 4000K WHITE 18V SMD
 
                            MEMS OSC XO 66.6666MHZ H/LV-CMOS
 
                            MOSFET N-CH 30V 35A PPAK 1212-8
 
                            DC DC CONVERTER 5V 100W
| 类型 | 描述 | 
|---|---|
| 系列: | TrenchFET® | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 30 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 7.5mOhm @ 18A, 10V | 
| vgs(th) (最大值) @ id: | 2.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 1230 pF @ 15 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 3.7W (Ta), 39W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | PowerPAK® 1212-8 | 
| 包/箱: | PowerPAK® 1212-8 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | STW12NK95ZSTMicroelectronics | MOSFET N-CH 950V 10A TO247-3 | 
|   | BSZ130N03LSGATMA1IR (Infineon Technologies) | MOSFET N-CH 30V 10A/35A 8TSDSON | 
|   | SQP50N06-09L_GE3Vishay / Siliconix | MOSFET N-CH 60V 50A TO220AB | 
|   | RM50N200HDRectron USA | MOSFET N-CH 200V 51A TO263-2 | 
|   | RM27P30LDRectron USA | MOSFET P-CHANNEL 30V 27A TO252-2 | 
|   | NTTFS5826NLTWGRochester Electronics | MOSFET N-CH 60V 8A 8WDFN | 
|   | MMDF2P01HDR2Rochester Electronics | P-CHANNEL POWER MOSFET | 
|   | IRFPG30PBFVishay / Siliconix | MOSFET N-CH 1000V 3.1A TO247-3 | 
|   | STWA88N65M5STMicroelectronics | MOSFET N-CH 650V 84A TO247 | 
|   | STD1NK60-1STMicroelectronics | MOSFET N-CH 600V 1A IPAK | 
|   | FQB8N60CFTMRochester Electronics | MOSFET N-CH 600V 6.26A D2PAK | 
|   | IRF9530NPBFIR (Infineon Technologies) | MOSFET P-CH 100V 14A TO220AB | 
|   | BUK9E8R5-40E,127Rochester Electronics | MOSFET N-CH 40V 75A I2PAK |